文件列表:

tsmc18rf_models (0, 2010-06-21)
tsmc18rf_models\SRC_ZIPPED (0, 2010-06-21)
tsmc18rf_models\spectre (0, 2010-06-21)
tsmc18rf_models\hspice (0, 2010-06-21)
tsmc18rf_models\eldo (0, 2010-06-21)
tsmc18rf_models\ADS (0, 2010-06-21)
tsmc18rf_models\REVISION.models (679, 2005-07-04)
tsmc18rf_models\SRC_ZIPPED\t-018-mm-sp-001_1_3_20040916.zip (12231487, 2005-07-04)
tsmc18rf_models\spectre\tsmc18msrf.pcf (8391, 2005-12-30)
tsmc18rf_models\spectre\rf_ahdl.va (505, 2005-07-04)
tsmc18rf_models\spectre\rf018.scs (831729, 2006-01-03)
tsmc18rf_models\spectre\cor_std_mos.scs (357, 2005-12-30)
tsmc18rf_models\spectre\cor_rfres_sa.scs (316, 2005-12-30)
tsmc18rf_models\spectre\cor_rfres_rpo.scs (327, 2005-12-30)
tsmc18rf_models\spectre\cor_rfres_hri.scs (327, 2005-12-30)
tsmc18rf_models\spectre\cor_rfmvar.scs (294, 2005-12-30)
tsmc18rf_models\spectre\cor_rfmos33.scs (477, 2005-12-30)
tsmc18rf_models\spectre\cor_rfmos.scs (443, 2005-12-30)
tsmc18rf_models\spectre\cor_rfmim.scs (283, 2005-12-30)
tsmc18rf_models\spectre\cor_rfjvar.scs (294, 2005-12-30)
tsmc18rf_models\spectre\cor_rfind.scs (283, 2005-12-30)
tsmc18rf_models\spectre\cor_rfesd.scs (283, 2005-12-30)
tsmc18rf_models\spectre\cor_res.scs (261, 2005-12-30)
tsmc18rf_models\spectre\cor_na.scs (392, 2005-12-30)
tsmc18rf_models\spectre\cor_mim.scs (261, 2005-12-30)
tsmc18rf_models\spectre\cor_m.scs (375, 2005-12-30)
tsmc18rf_models\spectre\cor_dio_dnw.scs (124, 2005-12-30)
tsmc18rf_models\spectre\cor_dio3.scs (109, 2005-12-30)
tsmc18rf_models\spectre\cor_dio.scs (104, 2005-12-30)
tsmc18rf_models\spectre\cor_bip3.scs (272, 2005-12-30)
tsmc18rf_models\spectre\cor_bip.scs (261, 2005-12-30)
tsmc18rf_models\spectre\cor_bbmvar.scs (294, 2005-12-30)
tsmc18rf_models\spectre\cor_3vna.scs (426, 2005-12-30)
tsmc18rf_models\spectre\cor_3v.scs (392, 2005-12-30)
tsmc18rf_models\spectre\cor_3m.scs (392, 2005-12-30)
tsmc18rf_models\hspice\temp.mdl (1407, 2006-01-02)
tsmc18rf_models\hspice\rf018_inc.l (581, 2005-07-04)
tsmc18rf_models\hspice\rf018.l (1079762, 2005-07-04)
... ...

This document is to provide SPICE circuit simulation parameters for the tsmc 0.18um RF IC 1P6M+ process in 1.8V/3.3V applications. Star-HSPICE (H2002.2 and later version), CADENCE Spectre (Spectre50.MSR and later version), Mentor Graphic Eldo (v6.3_3.1 and later version) and ADS (V2003C and later version) are used to verify & QA the BSIM3v3 models. Accuracy & QA in other simulators are not guaranteed. This model set includes the TSMC 0.18UM MIXED SIGNAL 1P6M+ SALICIDE 1.8V/3.3V SPICE MODELS (T-018-MM-SP-002) with modified corner conditions of core and IO nominal Vt MOSFETs to ensure model corner consistency between the baseband and RF models. Circuit designers need to use this model set for mixed baseband and high frequency circuit simulations. ******************************************************** ** TSMC RF SPICE MODEL ** ******************************************************** * * PROCESS : TSMC 0.18um Mixed-Signal Salicide (1P6M+, 1.8V/3.3V) * RF Spice Models * DOC. NO. : T-018-MM-SP-001 * VERSION : 1.3 * DATE : Aug.19, 2004 * ********************************************************************************* * * This document is intended to be a RF design reference guide for those who * use TSMC 0.18um RFIC 1P6M+ process in 1.8V/3.3V application. The 1.8V/3.3V * nominal Vt N/P MOS within/without deep-Nwell, MIM capacitor, spiral inductor, * MOS varactor, junction varactor, resistor, ESD and thick top metal interconnect * models are included. * ********************************************************************************** 1) MOS MODEL : a. Normal 1.8V N/PMOS model .lib MOS_RF : Typical model Model name NF L (um) Wf (um) low high low high low high ----------------------------------------------------------------- nmos_rf 1 *** 0.18 0.5 1.5 8 (normal nmos) ----------------------------------------------------------------- pmos_rf 1 *** 0.18 0.5 1.5 8 (normal pmos with DNW) ----------------------------------------------------------------- pmos_rf_nw 1 *** 0.18 0.5 1.5 8 (normal pmos without DNW) ----------------------------------------------------------------- nmos_rf_mis 1 *** 0.18 0.5 1.5 8 (mismatch nmos) ----------------------------------------------------------------- pmos_rf_mis 1 *** 0.18 0.5 1.5 8 (mismatch pmos with DNW) ----------------------------------------------------------------- pmos_rf_nw_mis 1 *** 0.18 0.5 1.5 8 (mismatch pmos without DNW) ----------------------------------------------------------------- **NF: Finger number **pmos_rf_nw: RF PMOS without DNW b. Normal 3.3V N/PMOS model .lib MOS_RF33 : Typical model Model name NF L (um) Wf (um) low high low high low high ----------------------------------------------------------------- nmos_rf33 1 *** 0.35 0.5 1.5 8 (normal nmos) ----------------------------------------------------------------- pmos_rf33 1 *** 0.3 0.5 1.5 8 (normal pmos with DNW) ----------------------------------------------------------------- pmos_rf33_nw 1 *** 0.3 0.5 1.5 8 (normal pmos without DNW) ----------------------------------------------------------------- nmos_rf33_mis 1 *** 0.35 0.5 1.5 8 (mismatch nmos) ----------------------------------------------------------------- pmos_rf33_mis 1 *** 0.3 0.5 1.5 8 (mismatch pmos with DNW) ----------------------------------------------------------------- pmos_rf33_nw_mis 1 *** 0.3 0.5 1.5 8 (mismatch pmos without DNW) ----------------------------------------------------------------- **NF: Finger number **pmos_rf33_nw: RF PMOS without DNW 2) MIM CAPACITOR MODEL : HF model: MiM_Cap w/i shield for 1PXM 4<=X<=6 MiM_Cap w/o shield for 1P6M 1. The MIM capacitors without Shield are modeled with sub-circuit 'mimcap_wos' .subckt mimcap : Typical model 2. The MIM capacitors with Shield are modeled with sub-circuit 'mimcap_shield' .subckt mimcap_shield : Typical model Model name lt wt unit low high low high ---------------------------------------------------- mimcap 4 30 4 30 um ---------------------------------------------------- **lt: length dimension of top metal **wt: width dimension of top metal **lt >= wt 3) SPIRAL INDUCTOR MODEL : The Inductors are modeled with sub-circuit 'spiral_s*_std', 'spiral_s*_sym', and 'spiral_s*_sym_ct' .subckt spiral_s2_std : Standard model with space=2um(fixed w=6um,9um,15um) for Inductance varies with turn(1/4turn increments) and radius .subckt spiral_s3_std : Standard model with space=3um(fixed w=30um) for Inductance varies with turn(1/4turn increments) and radius .subckt spiral_s2_sym : Symmetric model with space=2um(fixed w=9um,15um) for Inductance varies with turn(integral turn increments) and radius .subckt spiral_s3_sym : Symmetric model with space=3um(fixed w=30um) for Inductance varies with turn(integral turn increments) and radius .subckt spiral_s2_sym_ct : Symmetric model(CT) with space=2um(fixed w=9um,15um) for Inductance varies with turn(odd turn increments) and radius .subckt spiral_s3_sym_ct : Symmetric model(CT) with space=3um(fixed w=30um) for Inductance varies with turn(odd turn increments) and radius Model name turn rad (um) low high low high ------------------------------------------------------ spiral_s2_std W=6um 0.5 5.5 30 125 W=9um 0.5 5.5 30 125 W=15um 0.5 5.5 30 125 spiral_s3_std W=30um 1.5 5.5 30 125 ------------------------------------------------------ spiral_s2_sym W=9um 1 4 30 120 W=15um 1 5 40 120 spiral_s3_sym W=30um 1 5 65 150 ------------------------------------------------------ spiral_s2_sym_ct W=9um 1 3 30 120 W=15um 1 5 40 120 spiral_s3_sym_ct W=30um 1 5 65 150 ------------------------------------------------------ 4) MOS VARACTOR MODEL : Model name L(um) Group(g) Branch(b) Unit Cell ------------------------------------------------- moscap_rf 0.5 1 8 10 50 24 moscap_rf33 0.5 1 8 10 50 24 ------------------------------------------------- 5) JUNCTION VARACTOR MODEL : Model name L(um) W(um) Finger Unit Cell --------------------------------------------------- xjvar_w40 0.42 40 1 50 7 xjvar_nr36 0.42 20 60 36 5 --------------------------------------------------- 6) RESISTOR MODEL : Model name ---------------------------------------------------------------------- rppoly_rf P+Poly w/i silicide 0.18um<=W<=5um, 0.25um<=L<=100um, 1<=sqr<=20 rppolywo_rf P+Poly w/o silicide 1um<=W<=5um, 2um<=L<=15um, 2<=sqr<5 rppolyhri_rf P-Poly w/o silicide 1um<=W<=5um, 2um<=L<=6.8um, 2<=sqr<5 ---------------------------------------------------------------------- 6) ESD MODEL : Model name Description ---------------------------------------------- LCESD1_rf desinged for about 50fF LCESD2_rf desinged for about 100fF ---------------------------------------------- 7) RAW DATA : ## raw data files: 1. README : explain how to read the raw data format 2. NMOS018citi.zip : for 1.8V NMOS GROUP 3. PMOS018citi.zip : for 1.8V PMOS GROUP 4. NMOS033citi.zip : for 3.3V NMOS GROUP 5. PMOS033citi.zip : for 3.3V PMOS GROUP 6. PMOS018_nwciti.zip : for 1.8V PMOS GROUP in nwell 7. PMOS033_nwciti.zip : for 1.8V PMOS GROUP in nwell 8. MIM_WOS.zip : for MIM_capacitor without shield GROUP 9. MIM_WS.zip : for MIM_capacitor with shield GROUP 10. Inductorciti.zip : for Spiral_inductor GROUP 11. MVAR018citi.zip : for MOS_varactor GROUP 12. XJVAR018citi.zip : for Junction_varactor GROUP 13. Silicide_citi.zip : for silicided resistor GROUP 14. RPO_citi.zip : for RPO resistor GROUP 15. HRI_citi.zip : for HRI resistor GROUP 16. ESDciti.zip : for HRI resistor GROUP 17. TM_interconnect.zip : for Thick Metal interconnect GROUP 8) UPDATE HISTORY : V1.3 :1. Added mismatch model for MOS. 2. Added pmos without deep Nwell model. 3. Added new ESD model. 4. Added MOS varactor model for baseband. 5. Added distributed resistor model. 6. Corrected flicker noise model for CMOS. 7. Deleted Rsub,Csub and deep Nwell in the resistor models. V1.2 :1. Updated MOS model 2. Updated MIM capacitor model. 3. Updated inductor model. 4. Updated MOS varactor model. 5. Updated junction varactor model. 6. Updated resistor model. 7. Deleted ESD model V1.1 : 1. Added LCESD model. 2. Added passive corner model. 3. Added thermal noise of resistors in SPECTRE model. 4. Added thick metal interconnect model. V1.0 : 1. Updated 1.8V/3.3V N/P MOS model. 2. Updated MIM capacitor model. 3. Added HRI P- poly reisitor model. V0.6p1:1. Added models for Mentor Graphic Eldo v5.4_1.1 and later version. 2. Added corner models for 1.8V/3.3V N/P MOS. 3. Update junction varactor model. 4. ADS V 1.5 model is not updated in this version. V0.5 : 1. Added models for ADS V1.5 and later version. 2. Added high noise figure model with look-up table. 3. Corrected error in Hspice and Spectre model of MOS varactor: change the controlling node in the Cgate equation from external node to internal node. 4. Updated N/P mos model from Bsim3v3.1 to Bsim 3v3.2. V0.4 : 1. Revise macro models for 1.8V nominal Vt N/P MOS and MOS Varactor. 2. Add macro model for 3.3V nominal Vt N/P MOS. 3. Create macro model for resistor. 4. Add Juction Varactor model. V0.3 : Correct the parameter Rgates temperature coefficients in the MOS Varactor model. V0.2 : 1. Revise Tox of NMOS and PMOS from 4.17nm to 4.08nm and 4.17nm to 4.23nm, and XL from 18nm to 20nm in the model card to match on target values for simulation 2. Change the layer map from MS/RF definition to match the DSD definition. V0.1 : 1. Created macro models for 1.8V nominal Vt N/P MOS, MIM capacitor, Spiral inductor and MOS Varactor.

近期下载者：

相关文件：

评论：[我要评论] [举报此文件]

收藏者：