说明：  对IGBT栅极驱动特性、栅极串联电阻及其驱动电路进行了探讨。提出了慢降栅压过流保护和过电压吸收的有效方法。
(Characteristics of the IGBT gate driver, gate series resistance and its drive circuit are discussed. Put forward a slow-down gate voltage over-voltage over-current protection and an effective way to absorb.)